Interpretation of transient currents in amorphous-silicon hydride p-i-n and n-i-n devices

Transient current experiments on amorphous silicon hydride p-i-n and n-i-n devices were performed by M. Silver et al. (1986) as a means of studying the effects of localized states on charge transport in this material. However, some of the features of the observed current transients were not thoroughly understood. Here, simulations of these experiments are used to explain the experimental results and evaluate the parameter set used in the simulation.>