Amplification of bipolar current flow by charge induced from an insulated gate electrode

We present the results of a two-dimensional simulation of the amplification of an ambipolar current flow in a four-terminal crystalline silicon device by charge induced into this flow from an insulated gate electrode. We show that although a bipolar current flow in a crystalline device can indeed be modulated by a gate field, the magnitude of this modulation is less than in amorphous silicon double-injection field-effect transistors. Our proposed structure also has an interesting feature in that the gate field redistributes the current flow between its terminals.