Direct Solvothermal Synthesis of B/N‐Doped Graphene

Heteroatom‐doping into graphitic networks has been utilized for opening the band gap of graphene. However, boron‐doping into the graphitic framework is extremely limited, whereas nitrogen‐doping is relatively feasible. Herein, boron/nitrogen co‐doped graphene (BCN‐graphene) is directly synthesized from the reaction of CCl4, BBr3, and N2 in the presence of potassium. The resultant BCN‐graphene has boron and nitrogen contents of 2.38 and 2.66 atom %, respectively, and displays good dispersion stability in N‐methyl‐2‐pyrrolidone, allowing for solution casting fabrication of a field‐effect transistor. The device displays an on/off ratio of 10.7 with an optical band gap of 3.3 eV. Considering the scalability of the production method and the benefits of solution processability, BCN‐graphene has high potential for many practical applications.