Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V

Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V, Lee, Kean B., Guiney, Ivor, Jiang, Sheng, Zaidi, Zaffar H., Qian, Hongtu, Wallis, David J., Uren, Michael J., Kuball, Martin, Humphreys, Colin J., Houston, Peter A.