Zn-ion-implantation profiles in CuInSe2 by Auger electron spectroscopy

The depth distribution of implanted Zn in CuInSe2 was investigated using Auger electron spectroscopy coupled with continuous surface layer removal by argon-ion sputtering. The distribution was found to be influenced by the dose rate used in the implantation. The distribution obtained at a current density of 0.16 μA/cm2 is composed of two parts; one having a nearly Gaussian shape in the leading edge and the other having a nearly exponential shape in the trailing edge after the peak concentration. The tail appears to be due to a rapid diffusion process such as interstitial diffusion. A strong diffusion to the surface was observed from the samples implanted with a current density of 2 μA/cm2. This out-diffusion may occur through the damaged region as it has a lower activation energy.