Deformation-potential-theory calculation of the acoustic-phonon-limited conductivity and Hall mobilities for p -type silicon

Acoustic-phonon-limited conductivity and Hall mobilities of p-type silicon are calculated for the first time within the framework of the deformation potential theory of Tiersten. We solve the Boltzmann equation for the distribution function using hole---acoustic-phonon transition rates which are functions of hole energies and incident and scattered hole wave vectors. We employ no band-shape approximations and use deformation-potential parameters from independent experiments. The calculated mobilities are in excellent agreement with experiments without any empirical adjustment of input parameters.