A SAW delay-line oscillator based on an AlxGa1−xN-on-sapphire structure is presented, and its frequency dependence on temperature has been measured. The temperature coefficient of frequency −69 ppm/K has been found for the AlxGa1−xN layer thickness 1.7 µm, Al molar amount x=0.5, and operation frequency 226 MHz.
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Rimeika et al. (2004) studied this question.
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