A silicon bipolar transistor together with a barium titanate dielectric resonator were used to design a low noise microwave synthesizer. The oscillator was phase locked to a low-frequency (LF) reference with microwave frequency selection provided by a high-speed digital programmable divider within the phase-locked loop. The resulting FM noise Delta f/sub rms/ was 0.0003 Hz in a 1-Hz band greater than 1000 Hz from the 1-GHz carrier.
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Alley et al. (1979) studied this question.
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