SAW Devices Manufactured on GaN/Si for Frequencies Beyond 5 GHz

This letter describes the manufacture and characterization of surface acoustic wave (SAW) devices on GaN/Si devoted to applications above the 5-GHz frequency range. The SAW structures consist of two face-to-face interdigitated transducers (IDTs), placed at different distances. Using a TiAu metallization, 80-nm-thick and advanced e-beam lithographical techniques with IDTs with fingers and spacings 200 nm wide have been obtained on the GaN layer. On wafer measurement of theSparameters have demonstrated the operation at approximately 5.6 GHz. The frequency response of the devices is explained in detail.