Local side etch is one of the most significant problems in high-density plasma and low energy processing. In this paper, we report a detailed analysis of etching characteristics under various modulations and microwave conditions to achieve simultaneously no local side etch, a high etch rate and a high selectivity. In addition, we discuss the mechanism of the reduction of local side etch using a new method to estimate charge build-up.
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Maruyama et al. (1997) studied this question.
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