The instabilities caused by the reflected rf power in a pulsed-plasma operation employing modulated rf power was studied. By suppressing the side-band modes in the frequency domain, the pulsed plasma became more stable and produced less reflected power. The mode-suppressed pulsed plasma showed almost the same plasma characteristics as the conventional step-function-modulated pulsed plasma. The mode-suppressed plasma was applied to etch a polysilicon pattern. The etched polysilicon profile showed no charge-up defects, suggesting that the mode-suppressed plasma can be utilized for controlling the electron temperature in a more stable operation.
No takes yet. Share an insight, caveat, or question.
Hahm et al. (1997) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: