Electrical Properties of Gallium Antimonide

Data are presented on the conductivity and Hall coefficient of several samples of GaSb over the temperature from -196^∘{}C to 650^∘{}C. The lowest room-temperature conductivity obtained was 12 ohm^-1 cm^-1. All material produced from zone-purified components was p-type. N-type material was produced by doping with tellurium, as were p-n junctions. The intrinsic band gap is estimated from junction rectification data to be 0.78 ev at -196^∘{}C. The mobility of electrons was found by measurement on n-type material to be several times greater than the hole mobility. The mobilities of both holes and electrons are found to vary approximately as T^-3/2 in the lattice scattering range.