Deep-level transient spectroscopy is used to determine the energetic positions of the deep levels induced by titanium in the silicon band gap. The experimental results confirm that titanium is an amphoteric center with an acceptor level at Ec–0.09 eV and two donor levels at Ec−0.30 eV and Ev+0.26 eV. The properties of the first donor level are analyzed in more detail, and an explanation is proposed for the absence of the Poole–Frenkel effect at this level.
No takes yet. Share an insight, caveat, or question.
Mathiot et al. (1989) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: