The authors present a near 1200 nm wavelength vertical-cavity surface-emitting laser (VCSEL) the active region of which is formed by GaInNAs/GaAs quantum wells grown by chemical beam epitaxy. Room temperature continuous-wave operation has been demonstrated with a high slope efficiency of 0.23 W/A, a high output power of over 1.0 mW, and a singlemode output power of 0.34 mW. The fabricated devices with different aperture sizes show low threshold currents of 1.2–2.1 mA and a record low threshold current density of 2.6 kA/cm2 in GaInNAs VCSELs.
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Kageyama et al. (2001) studied this question.
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