A transient equivalent circuit for junction transistors

Transistor action is controlled by the diffusion of both holes and electrons, and it may be seen readily that the transient characteristics of the junction-type transistor also depend, in a large measure, upon the diffusion processes. By applying the Laplace transformation to the diffusion partial differential equation the equivalent circuit may be generalized to include the transient, as well as the d-c and a-c, characteristics. The case of pulse-response is treated as a specific example of the application of the generalized impedances.