A technique has been developed for doping thin dielectric films with either positive or negative ions from aqueous solution. The experimental investigations were made on 60–400-Å thick aluminum oxide films. The influence of doping on Schottky or Poole-Frenkel emission was shown by comparison of the electrical characteristics of the doped and undoped films. The predominating mechanisms are, for thin (<100 Å) films, Shottky emission; for thick (400 Å) films, Poole-Frenkel emission; and for films of intermediate thickness (∼200 Å) Poole-Frenkel and Schottky for doped and undoped, respectively.
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J. Antula (1971) studied this question.
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