Features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x∕Si (x∼0.4–0.5) films caused by Si substrate misorientation from (001)

We have studied the dislocation structure at the initial stage of relaxation of GexSi1−x films (x∼0.4–0.5) grown on Si substrates tilted 6° about the ⟨011⟩ axis. It is demonstrated that edge misfit dislocations (MDs) in the miscut direction arise in the form of short segments on intersections of 60° MDs. Substrate misorientation from the singular plane made it possible to discover the MD configurations consisting of a short segment of an edge MD and only two 60° MDs diverging from this segment in the miscut direction.