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The initial stage of relaxation of mechanical stresses in the Ge0.32Si0.68∕Si(001) heterostructure grown by low-temperature (300°C) molecular-beam epitaxy is studied by means of transmission electron microscopy. Dislocation half-loops propagating from the film surface and generating misfit dislocations during expansion are visualized.
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Bolkhovityanov et al. (2004) studied this question.
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