0.1 µm Ga 0.51 In 0.49 P/In 0.2 Ga 0.8 AsPHEMT grown byGSMBE with high DC and RF performances

0.1 µm Ga0.51In0.49P/In0.2Ga0.8As/GaAs PHEMTs grown by GSMBE have been realised. A new interface GaInP/InGaAs has been studied and optimised to give a 2-DEG density of 2 × 1012 cm–2 with a mobility of 5500 cm2/V s at 300 K. The AuGe/Ni/Au Ohmic contact has been also optimised (Rc = 0.08 Ω.mm) and a new nonselective wet chemical etching technique based on iodic acid (HIO3) has been developed. This device with single δ-doping exhibits state of the art DC and RF performances in this new system with a current density of 780 mA/mm, a breakdown voltage of 9 V, a Gm of 700 mS/mm and an Ft of 120 GHz.