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Experimental evidence is provided that gettering of iron by polycrystalline silicon (polysilicon) is driven by a combination of two gettering mechanisms, segregation and relaxation. The segregation coefficient of iron in polysilicon in samples annealed at temperatures between 1020 and 1175°C varied from approximately 16 to 2. The efficiency of relaxation gettering by polysilicon was characterized using Ham’s model of diffusion-limited gettering. The product nr0 for the 11-μm-thick polysilicon layer was estimated as 106cm−2.
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Istratov et al. (2004) studied this question.
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