The radiative recombination from an electron‐hole liquid (EHL) is investigated in highly excited pure Ga(As1−xPx) with indirect band structure. The experimental results reveal an arsenic‐induced radiative no‐phonon (NP) transition from the liquid phase. The comparison of the experimental and calculated lineshape of the EHL luminescence band provides the fundamental parameters of the EHL obtained for a sample with x = 0.88. The equilibrium carrier density and the work function at T = 2 K are determined to be neq = 9 × 1018 cm−3 and Φ = (20 ± 1) me V, respectively. The influence of the arsenic atoms on the energetic properties of the EHL is qualitatively discussed.
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Wilke et al. (1980) studied this question.
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