Evidence is given that the quantum efficiency of holes is field-independent at low electric fields (E < 104 V/cm). It is shown, that the strong field dependence of the quantum efficiency usually observed experimentally at low fields is due to surface recombination. A proof of this conclusion is based on a theoretical and experimental comparison between the properties of the effective quantum efficiency measured when holes drift off the surface and along the surface.
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Juška et al. (1976) studied this question.
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