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Amorphous chalcogenide thin-film p-n junctions have been formed between p-type As2Se3 or Ge20Se80 and n-type Ge20Bi15Se65. The rectifying behavior was observed only for the junctions which were formed by depositing the p-type films on the annealed n-type films. The forward currents in these junctions were found to be space-charge-limited, as in the previously formed p-type film/n-type bulk glass junctions. The photovoltaic properties of the thin-film p-n junctions have been improved, compared with the film/bulk glass junctions, due to the decrease in series resistance of the cells.
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Tohge et al. (1988) studied this question.
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