Ion implantation has been used to form colour centres in concentrations as high as 10 20 cm -3 in LiF. At low ion doses the F and F 2 production is proportional to (dose) 0.8 and (dose) 1.1 respectively which is interpreted as a consequence of interstitial trapping. The apparent F to F 2 dependence is (F 2 ) varies as (F) 1.4 but after allowance for overlapping absorption features this corrects to the normal (F 2 )=K 1 (F) 2 relation. The K 1 value is closely linked to the electronic stopping power for energetic proton bombardment.
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Abu-Hassen et al. (1986) studied this question.
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