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Photoluminescence from excitons bound to shallow donors or acceptors was studied in Al-, As-, B-, Ga- and P-doped Ge. Excitons bound to Al and B acceptors were identified for the first time. The dissociation energy of the excitons satisfies Haynes rule and changes with a factor of 0.1 linearly with the ionization energy of the dopants.
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Allardt et al. (2011) studied this question.
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