A description is given of a laser with a transverse p – n junction, in which the active region is a p – n GaAs (0.45 μ ) homojunction enclosed between epitaxial Ga 1- x Al x As ( x ≈0.35) films. This structure is formed on a semiinsulating GaAs substrate by liquid epitaxy. The threshold current is found to be 30 mA at room temperature and the differential quantum efficiency is 65%. Single-mode stimulated emission is reported for a wide range of injection currents at 300 K. The results of studies of radiative and dynamic properties of such lasers are reported.
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Бородулин et al. (1981) studied this question.
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