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The present state of the interpretation of the broad band edge emission in II–VI compound semiconductors is investigated and a possible reformulation given which assigns both the “high” and “low” energy series emission to transitions between donor‐acceptor pairs. It is shown that the resulting model, although similar to one proposed recently by Gutsche and Goede [1], is different in the nature of the interpretation of the phenomena and furthermore is free from various conceptual difficulties to which the model of these latter authors is subject. A means of forming an experimental investigation of the validity of these newproposals is described.
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W. E. Hagston (1972) studied this question.
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