An accurate measurement of the electrical resistivity ρ of polycrystalline indium from 30 to 425 K is reported. Indium has an exceptionally large value of d(ρT)dT at high temperatures. This feature is explained by the influence of the thermal expansion, in particular, changes in the electronic structure connected with the anisotropic expansion coefficient.
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Fogelholm et al. (1981) studied this question.
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