Noncrystalline films of zinc oxide have been formed by reactively sputtering zinc metal onto a low-temperature substrate in an oxygen-argon atmosphere. The structural state of the films is determined by the temperature of the condensing substrate, and noncrystalline films formed at low substrate temperatures crystallize on heating to 75°–100°C in air or vacuum. A change in optical absorption corresponds to an increase in band gap energy for the crystalline to noncrystalline transition; this is interpreted as resulting from the change in dielectric constant occurring for the same transition. A large reduction in electrical conductivity observed for the noncrystalline material is believed to result mainly from reduced carrier concentration.
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Mickelsen et al. (1966) studied this question.
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