Space-charge-limited (SCL) currents in materials with quasicontinuous energy distribution of localized states are discussed. A simple analytical method is developed enabling to extract quantitative information about an arbitrary energetic distribution of localized states from a single experimental SCL current-voltage characteristic. The energy dominating the statistics of trapped carriers is determined from the voltage dependence of the activation energy of SCL current. The applicability of the method is illustrated on (a-As2Se3) using heterostructures (a-As2Se3)/(c-CdSe).
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Schauer et al. (1983) studied this question.
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