ZnTe-CdSe Heterojunctions I. Electrical Properties

ZnTe-CdSe heterojunctions were obtained by gas-transport epitaxy of cadmium selenide on zincum telluride single crystalline substrates. Structural investigations showed that CdSe single crystalline films of cubic modification have been obtained at substrate temperatures more than 450 °C. Current-voltage and capacitance-voltage characteristics were studied. At forward voltages less than the diffusionpotential, equal to 1.2 V, the current depends exponentially on the voltage. The soft breakdown observed at reverse bias is caused by tunneling. The results of the structural and electrical investigations indicated a sharp interface between the materials forming the heterojunction. The interface states do not appreciably influence the heterojunction properties. Anderson's model was used for the calculation of the heterojunction parameters and the construction of the band diagram.