Binary Si:H alloys containing a number of polysilane (SiH₂)ₙ groups have been produced by plasma chemical-vapor deposition of disilane. High-resolution electron micrographs of these alloys clearly show a number of lattice fringes, indicating that the polysilane groups are crystallized. The extended x-ray-absorption fine structures as well as the electron-diffraction patterns show that the Si atoms in the polysilane crystals occupy the same lattice points as those of tetrahedrally bonded silicon crystal.
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Furukawa et al. (1986) studied this question.
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