Fabrication of Si:H Alloy with Plenty of –SiH3 by Reactive Sputtering onto Low Temperature Substrate

Si:H alloy with strong infrared absorption bands due to the –SiH3 group was fabricated by means of a planar magnetron r.f. sputtering technique in hydrogen gas onto a low temperature substrate. The content of the –SiH3 group increases greatly by cooling down the single crystal silicon wafer substrate to about -60°C. The deposition rate was 1200 Å/min. The deposit Si:H alloy is composed of microcrystalline grains with a uniform polyhedron or spherical shape and a uniform diameter of 100 Å.