We have investigated photoluminescence (PL) from Sb-doped p-type ZnO films obtained by thermal oxidation of the Zn-Sb starting material. Very well resolved PL spectra were obtained from samples, with the hole concentration above 1×10¹⁷0.3em0excm^-3. Acceptor binding energy is determined to be 1370.3em0exmeV from free electron to acceptor transitions. The binding energy between the acceptor and the exciton obtained from the analysis of the acceptor bound excitonic PL transitions measured as a function of temperature is 12--150.3em0exmeV.
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Przeździecka et al. (2007) studied this question.
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