Doping of ZnTe has been carried out by metalorganic vapor phase epitaxy using triethylaluminum as the dopant source. N-type ZnTe layers with a carrier concentration of (1–4) ×1017cm-3and a resistivity as low as 0.1–0.3 Ω·cm have been obtained. It has been indicated by the photoluminescence measurement that Al is incorporated effectively into the epitaxial layer.
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Ogawa et al. (1994) studied this question.
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