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Photoreflectance and electroreflectance spectra of n‐type GaAs are calculated as a function of the doping level, the field modulation and the broadening energy. As a general result it is found that, except in the limiting case of very low modulation fields, the electroreflectance and photoreflectance signals are not proportional to each other. The influence of the various parameters on the spectra is discussed.
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Bouamama et al. (1992) studied this question.
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