The surface recombination velocity of n-type germanium is found to vary when an electric field is applied normal to the surface of the material. The results are sensitive to the atmosphere around the germanium. The theoretical predictions of the relation between surface recombination velocity and surface potential are qualitatively confirmed by these experiments. In addition, further evidence in favor of the surface-trap explanations for semiconductor excess noise now is found.
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Thomas et al. (1956) studied this question.
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