Dielectric Engineered Tunnel Field-Effect Transistor

The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high-performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics results in a high electric field at the tunnel junction. As a result, a record ON-current of ~1000 μA/μm and a subthreshold swing (SS) below 20 mV/decade are predicted for WTe2DE-TFET. The proposed TFET works based on a homojunction channel and electrically doped contacts both of which are immune to interface states, dopant fluctuations, and dopant states in the bandgap, which typically deteriorate the OFF-state performance and SS in the conventional TFETs.