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Through mixed-mode device and circuit simulation, this paper provides an estimate of the effective output capacitance(CEFF)and drive current(IEFF)for delay (τf = 0.69 RswCEFF, whereRsw = VDD/2\ IEFF) estimation of unloaded tunnel field-effect transistor (TFET) inverters. It is shown that unlike MOSFET inverters, whereCEFFis approximately equal to the gate capacitance(Cgg), in TFET inverters, the output capacitance can be as high as 2.6 times the gate capacitance. A three-point model is proposed to extract the effective drive current from the real-time switching current trajectory in a TFET inverter.
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Mookerjea et al. (2009) studied this question.
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