Magnetotransport measurements are reported near the magnetic-field-induced metal-insulator transition in Si-doped GaAs. Optical measurements reported earlier gave evidence for a metallic impurity band for donor densities up to approximately five times the zero-field Mott density. Shubnikov--de Haas--like oscillations are observed at all metallic donor densities and magnetic fields. Enhanced carrier effective masses are found in the metallic-impurity-band range of densities.
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Liu et al. (1992) studied this question.