Analysis of radiation chemical yields of chlorinated polystyrene derivatives

A technique for determining radiation chemical yields from lithographic exposure curves for crosslinking type negative electron beam resists has been extended to include polymers with a general Poisson distribution. The technique is applied to several different chlorine‐containing styrene‐based resists. The radiation yields show good agreement with the differences in lithographic sensitivity and are explained by recent mechanistic studies. Optimal synthetic approaches for preparing this type of resist are described.