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July 1, 1995Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Homoepitaxy and controlled oxidation of silicon at low temperatures using low-energy ion beams

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Authors

AAA. Al-BayatiUniversity of BaghdadSTS. S. TodorovUniversité Libre de BruxellesKBKevin J. BoydUniversity of Connecticut

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Cite This Study

Al-Bayati et al. (1995) studied this question.

synapsesocial.com/papers/6a90dcbd647f40dea9c1a367https://doi.org/10.1116/1.587871
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