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We demonstrate that the transmission of far- and near-field incident light through a periodic array of subwavelength holes in a vanadium-dioxide (VO₂) thin film is enhanced in the infrared range with respect to transmission through the unperforated film when VO₂ undergoes its semiconductor-to-metal transition. We explain this enhancement by analyzing the loss of transmitted intensity due to leaky evanescent waves inside the holes and scattering at the entrance and exit apertures. Numerical simulations based on the transfer-matrix formalism provide qualitative support for the model and reproduce the principal features of the experimental measurements.
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Donev et al. (2006) studied this question.
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