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The average device yield for high efficiency Al/sub 0.37/Ga/sub 0.63/As and GaAs n-p diode solar cells was increased, from below 25% to above 75%, by doubling the thickness of the GaAs cap layer to 0.6 /spl mu/m. Low yields were characterized by a nonlinear shunting mechanism, which partially shorted the junction of the solar cell, independent of the various contact metals and thermal treatments used for ohmic contact formation.
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Ristow et al. (1996) studied this question.
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