Substitutional carbon in Czochralski Si is found to decrease the formation rate for a 935 cm−1 infrared absorption band under neutron irradiation while that for a 965 cm−1 band (interstitial carbon trapped at interstitial oxygen) increases. The observations support a controversial previous assignment of the 935 cm−1 band to a center with interstitial Si trapped by interstitial oxygen.
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H. J. Stein (1989) studied this question.
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