Total energy calculations performed to study the migration of silicon self-interstitials reveal a great complexity of migration paths. Si⁽⁺⁺⁾ and Si⁽⁰⁾ each migrate along more than one path and different paths from each other. Some paths involve interchange with bulk atoms. Electron-assisted transport occurs for the Si⁽⁺⁺⁾ stable tetrahedral site in all directions. Si⁽⁰⁾ has several almost-degenerate lowest-energy configurations. The lowest is the "exchange" configuration which also has the possibility of being negative (Si^(-)).
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Bar-Yam et al. (1984) studied this question.
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