Answers are grounded in this paper and cite their sources.
We report the observation of photoconductivity in Ge:Ga (NA =3× 1016 cm−3 and 8×1015 cm−3) at 4.2 °K, using high-intensity, far-infrared radiation (I≂10 kW/cm2; λ=496 μm). This observation is unexpected since the impurity ionization potential (Ei =10.97 meV) is greater than the photon energy (hν=2.5 meV). The excitation of holes into the valence band is confirmed by the large decrease in sample resistance (from ∼MΩ to ≤20 Ω) and the decrease in transmission at high intensities. A two-step excitation model matches the behavior of the intensity dependence of the photoconductivity.
No takes yet. Share an insight, caveat, or question.
Leung et al. (1984) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: