A p‐Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction Diodes

Oxide electronics, which together with amorphous semiconductors could become a rapid‐growth field, have come a step closer with the first report of a p‐type amorphous oxide semiconductor, ZnO·Rh2O3. The thin‐film deposition of this material at room temperature and the fabrication of p–n heterojunction diodes on flexible plastic sheets (see Figure) are demonstrated.