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January 1, 2016IEEE Electron Device Letters

Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors

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Authors

QLQuang Ho LucNational Yang Ming Chiao Tung UniversitySCShou ChengNational Yang Ming Chiao Tung UniversityPCPo- Yi ChangNational Yang Ming Chiao Tung University

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Luc et al. (2016) studied this question.

synapsesocial.com/papers/6a90e36ad2f2d69b3a744ba8https://doi.org/10.1109/led.2016.2581175
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Also Consider

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  1. 1Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density2015 · 31 citations
  2. 2Passivation of oxygen vacancy states in HfO2 by nitrogen2006 · 157 citations
  3. 3The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor2010 · 106 citations
  4. 4GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition2003 · 308 citations
  5. 5Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack2015 · 17 citations