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The dependence of creep switching on film thickness has been measured in Permalloy magnetic films 200 to 2000 Å thick. No creep was observed in films thinner than 400 Å. With a 1-Oe (0.6 Hw) dc easy-axis field present, the transverse threshold field for many-pulse disturbing decreases an order of magnitude between 400 and 600 Å. Between 600 and 2000 Å, this creep threshold remains essentially constant. The practical significance in limiting the word line density in magnetic film memories and providing a writing mode for NDRO or band-switched memories are discussed.
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Gagnon et al. (1965) studied this question.
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